d a t a sh eet product speci?cation 2004 mar 15 discrete semiconductors PESD5V0L7BS low capacitance 7-fold bi-directional esd protection diode array in so8 package
2004 mar 15 2 philips semiconductors product speci?cation low capacitance 7-fold bi-directional esd protection diode array in so8 package PESD5V0L7BS features bi-directional esd protection of up to 7 lines low diode capacitance max. peak pulse power: p pp = 35 w at t p = 8/20 m s low clamping voltage: v (cl)r = 17 v at i pp = 2.5 a ultra low leakage current: i rm = 3 na at v rwm =5v esd protection: >10 kv iec 61000-4-2; level 4 (esd) iec 61000-4-5; (surge): i pp = 2.5 a at t p = 8/20 m s. applications computers and peripherals communication systems audio and video equipment high speed data lines parallel ports. description low capacitance 7-fold bi-directional esd protection diode array in a small so8 plastic package, designed to protect up to seven transmission or data lines from electrostatic discharge (esd) damage. marking quick reference data pinning type number marking code PESD5V0L7BS 5v0l7bs symbol parameter value unit v rwm reverse stand-off voltage 5v c d diode capacitance; v r = 0 v; f = 1 mhz 8pf number of protected lines 7 pin description 1, 2, 3, 4, 5, 6, 7, 8 cathodes 8 7 6 5 1 2 3 4 001aaa389 8 7 6 5 1 2 3 4 sym005 fig.1 simplified outline (so8) and symbol. ordering information type number package name description version PESD5V0L7BS so8 plastic small outline package; 8 leads; body width 3.9 mm sot96-1
2004 mar 15 3 philips semiconductors product speci?cation low capacitance 7-fold bi-directional esd protection diode array in so8 package PESD5V0L7BS limiting values in accordance with the absolute maximum rating system (iec 60134). notes 1. non-repetitive current pulse 8/20 m s exponential decay waveform; see fig.2. esd maximum ratings notes 1. device stressed with ten non-repetitive esd pulses; see fig.3. esd standards compliance symbol parameter conditions min. max. unit per diode p pp peak pulse power 8/20 m s pulse; note 1 - 35 w i pp peak pulse current 8/20 m s pulse; note 1 - 2.5 a t amb operating ambient temperature - 65 +150 c t j junction temperature - 150 c t stg storage temperature - 65 +150 c symbol parameter conditions value unit esd electrostatic discharge capability iec 61000-4-2 (contact discharge); note 1 10 kv hbm mil-std 883 10 kv iec 61000-4-2, level 4 (esd); see fig.3 > 8 kv (contact) hbm mil-std 883, class 3 > 4 kv
2004 mar 15 4 philips semiconductors product speci?cation low capacitance 7-fold bi-directional esd protection diode array in so8 package PESD5V0L7BS handbook, halfpage 010 e - t 20 t ( m s) i pp (%) 40 120 0 40 80 30 mle218 100 % i pp ; 8 m s 50 % i pp ; 20 m s fig.2 8/20 m s pulse waveform according to iec 61000-4-5. 001aaa191 i pp 100 % 90 % t 30 ns 60 ns 10 % t r = 0.7 to 1 ns fig.3 electrostatic discharge (esd) pulse waveform according to iec 61000-4-2. electrical characteristics t j =25 c unless otherwise speci?ed. note 1. non-repetitive current pulse 8/20 m s exponentially decaying waveform; see fig.2. symbol parameter conditions min. typ. max. unit per diode v rwm reverse stand-off voltage -- 5v i rm reverse leakage current v rwm =5v - 325na v (cl)r clamping voltage note 1 i pp =1a -- 11 v i pp = 2.5 a -- 17 v v br breakdown voltage i r = 1 ma 7.2 7.6 7.9 v r diff differential resistance i r =1ma -- 100 w c d diode capacitance v r = 0 v; f = 1 mhz - 810pf
2004 mar 15 5 philips semiconductors product speci?cation low capacitance 7-fold bi-directional esd protection diode array in so8 package PESD5V0L7BS 001aaa192 t p ( m s) 110 4 10 3 10 10 2 10 10 2 p pp (w) 1 fig.4 peak pulse power as a function of pulse time; typical values. t amb =25 c. t p = 8/20 m s exponential decay waveform; see fig.2. t j ( c) 0 200 150 50 100 001aaa193 0.4 0.8 1.2 p pp 0 p pp(25?c) fig.5 relative variation of peak pulse power as a function of junction temperature; typical values. v r (v) 05 4 23 1 001aaa142 7 8 9 c d (pf) 6 fig.6 diode capacitance as a function of reverse voltage; typical values. t amb =25 c; f = 1 mhz. 001aaa143 1 10 i r 0 t j ( c) 25 150 125 75 100 50 i r(25 c) fig.7 relative variation of reverse leakage current as a function of junction temperature; typical values.
2004 mar 15 6 philips semiconductors product speci?cation low capacitance 7-fold bi-directional esd protection diode array in so8 package PESD5V0L7BS 001aaa144 450 w 50 w iec61000-4-2 network c z = 150 pf; r z = 330 w dut: PESD5V0L7BS rg 223/u 50 w coax r z c z esd tester 4 ghz digital oscilloscope 10 attenuator vertical scale = 200 v/div horizontal scale = 50 ns/div vertical scale = 10 v/div horizontal scale = 50 ns/div vertical scale = 200 v/div horizontal scale = 50 ns/div vertical scale = 10 v/div horizontal scale = 50 ns/div gnd gnd gnd unclamped + 1 kv esd voltage waveform (iec61000-4-2 network) clamped + 1 kv esd voltage waveform (iec61000-4-2 network) gnd unclamped - 1 kv esd voltage waveform (iec61000-4-2 network) clamped - 1 kv esd voltage waveform (iec61000-4-2 network) fig.8 esd clamping test set-up and waveforms.
2004 mar 15 7 philips semiconductors product speci?cation low capacitance 7-fold bi-directional esd protection diode array in so8 package PESD5V0L7BS application information the PESD5V0L7BS can protect up to seven lines against damage caused by bi-directional electrostatic discharge (esd) and surge pulses whose polarities. the PESD5V0L7BS can be used to protect lines whose signal polarities are above and below ground. the PESD5V0L7BS provides a surge capability of 35 w (p pp ) per line for a 8/20 m s waveform. typical application circuit board layout and protection device placement circuit board layout is critical for the suppression of esd, eft and surge transients. the following guidelines are recommended: place the PESD5V0L7BS as close as possible to the input terminal or connector minimize the path length between the PESD5V0L7BS and the protected line keep parallel signal paths to a minimum avoid running protected conductors in parallel with unprotected conductors minimize all printed-circuit board conductive loops including power and group loops minimize the length of transient return paths to ground avoid using shared return paths to a common ground point ground planes should be used whenever possible. use vias for multi-layer printed-circuit boards. 001aaa145 high speed data lines PESD5V0L7BS gnd fig.9 typical application: bi-directional esd protection of seven data lines.
2004 mar 15 8 philips semiconductors product speci?cation low capacitance 7-fold bi-directional esd protection diode array in so8 package PESD5V0L7BS package outline unit a max. a 1 a 2 a 3 b p cd (1) e (2) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec jeita mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 0.7 0.6 0.7 0.3 8 0 o o 0.25 0.1 0.25 dimensions (inch dimensions are derived from the original mm dimensions) notes 1. plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. 1.0 0.4 sot96-1 x w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 4 5 pin 1 index 1 8 y 076e03 ms-012 0.069 0.010 0.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.20 0.19 0.16 0.15 0.05 0.244 0.228 0.028 0.024 0.028 0.012 0.01 0.01 0.041 0.004 0.039 0.016 0 2.5 5 mm scale so8: plastic small outline package; 8 leads; body width 3.9 mm sot96-1 99-12-27 03-02-18
2004 mar 15 9 philips semiconductors product speci?cation low capacitance 7-fold bi-directional esd protection diode array in so8 package PESD5V0L7BS data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
? koninklijke philips electronics n.v. 2004 sca76 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands r76/01/pp 10 date of release: 2004 mar 15 document order number: 9397 750 12249
|
